Продукція > AOV
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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AOV11S60 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; DFN4 Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DFN4 Drain-source voltage: 600V Drain current: 7A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт | товар відсутній | |
AOV11S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 650MA/8A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V Power Dissipation (Max): 8.3W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V | товар відсутній | |
AOV11S60 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; DFN4 Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DFN4 Drain-source voltage: 600V Drain current: 7A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar | товар відсутній | |
AOV15S60 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.4A; DFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.4A Case: DFN4 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 15.6nC Kind of channel: enhanced | товар відсутній | |
AOV15S60 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.4A; DFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.4A Case: DFN4 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 15.6nC Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |
AOV15S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 520MA/12A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 4-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V | товар відсутній | |
AOV20S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 3.6A/18A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 8.3W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | товар відсутній | |
AOV20S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 3.6A/18A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 8.3W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: 4-DFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | товар відсутній |