Продукція > B2D
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| B2D-211213 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .2 WIDE,BTN,SGL SLDR | товар відсутній | |||||||||||||
| B2D-212211 | OTTO | Basic / Snap Action Switches REDUCED DEAD BREAK, .20 WIDE,BTN,DOUBLE | товар відсутній | |||||||||||||
| B2D-213213 | OTTO | Basic / Snap Action Switches B2, LOW DEADBREAK, .2 WIDE,BTN, QC TERM | товар відсутній | |||||||||||||
| B2D02120E1 | BASiC SEMICONDUCTOR | B2D02120E1 SMD Schottky diodes | на замовлення 3814 шт: термін постачання 7-14 дні (днів) |
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| B2D02120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 35W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.9V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 20A Leakage current: 20µA Power dissipation: 35W | на замовлення 139 шт: термін постачання 21-30 дні (днів) |
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| B2D02120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 35W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.9V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 20A Leakage current: 20µA Power dissipation: 35W кількість в упаковці: 1 шт | на замовлення 139 шт: термін постачання 7-14 дні (днів) |
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| B2D04065D | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 10µA Power dissipation: 26W | товар відсутній | |||||||||||||
| B2D04065D | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 32A Leakage current: 10µA Power dissipation: 26W кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D04065D1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode | товар відсутній | |||||||||||||
| B2D04065D1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; reel,tape Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape Mounting: SMD Case: TO252-2 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode | на замовлення 2478 шт: термін постачання 21-30 дні (днів) |
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| B2D04065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252-2; reel,tape Mounting: SMD Case: TO252-2 Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode кількість в упаковці: 1 шт | на замовлення 2478 шт: термін постачання 7-14 дні (днів) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.6V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W | на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| B2D04065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 39W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.6V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 34A Leakage current: 20µA Power dissipation: 39W кількість в упаковці: 1 шт | на замовлення 44 шт: термін постачання 7-14 дні (днів) |
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| B2D04065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode | товар відсутній | |||||||||||||
| B2D04065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D04065V | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: SMB flat Kind of package: reel; tape Leakage current: 5µA Max. forward impulse current: 32A Power dissipation: 10W | товар відсутній | |||||||||||||
| B2D04065V | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: SMB flat Kind of package: reel; tape Leakage current: 5µA Max. forward impulse current: 32A Power dissipation: 10W кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D04065V1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: SMB flat Kind of package: reel; tape | товар відсутній | |||||||||||||
| B2D04065V1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: SMB flat Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D05120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape | товар відсутній | |||||||||||||
| B2D05120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D05120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 64W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.75V Case: TO220-2 Kind of package: tube Leakage current: 30µA Max. forward impulse current: 55A Power dissipation: 64W | на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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| B2D05120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 64W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.75V Case: TO220-2 Kind of package: tube Leakage current: 30µA Max. forward impulse current: 55A Power dissipation: 64W кількість в упаковці: 1 шт | на замовлення 70 шт: термін постачання 7-14 дні (днів) |
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| B2D06065E1 | BASiC SEMICONDUCTOR | B2D06065E1 SMD Schottky diodes | на замовлення 2492 шт: термін постачання 7-14 дні (днів) |
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| B2D06065K1 | BASiC SEMICONDUCTOR | B2D06065K1 THT Schottky diodes | на замовлення 100 шт: термін постачання 7-14 дні (днів) |
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| B2D06065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube | на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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| B2D06065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 177 шт: термін постачання 7-14 дні (днів) |
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| B2D06065KS | BASiC SEMICONDUCTOR | B2D06065KS THT Schottky diodes | товар відсутній | |||||||||||||
| B2D06065Q | BASiC SEMICONDUCTOR | B2D06065Q SMD Schottky diodes | товар відсутній | |||||||||||||
| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 57W; TO220-2; tube Type of diode: Schottky rectifying Case: TO220-2 Mounting: THT Kind of package: tube Power dissipation: 57W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.7V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V кількість в упаковці: 1 шт | на замовлення 8 шт: термін постачання 7-14 дні (днів) |
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| B2D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 57W; TO220-2; tube Type of diode: Schottky rectifying Case: TO220-2 Mounting: THT Kind of package: tube Power dissipation: 57W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.7V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V | на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Case: TO220-2 Mounting: THT Kind of package: tube Technology: SiC Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V | на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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| B2D08065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Case: TO220-2 Mounting: THT Kind of package: tube Technology: SiC Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V кількість в упаковці: 1 шт | на замовлення 80 шт: термін постачання 7-14 дні (днів) |
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| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 37W; TO220ISO; tube Type of diode: Schottky rectifying Case: TO220ISO Mounting: THT Kind of package: tube Power dissipation: 37W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.54V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V кількість в упаковці: 1 шт | на замовлення 45 шт: термін постачання 7-14 дні (днів) |
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| B2D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 37W; TO220ISO; tube Type of diode: Schottky rectifying Case: TO220ISO Mounting: THT Kind of package: tube Power dissipation: 37W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.54V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V | на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| B2D10065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape | товар відсутній | |||||||||||||
| B2D10065E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D10065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 54W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.67V Leakage current: 20µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D10065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 54W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.67V Leakage current: 20µA | товар відсутній | |||||||||||||
| B2D10065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D10065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape | товар відсутній | |||||||||||||
| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 62W Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 85A Max. forward voltage: 1.7V Leakage current: 20µA | товар відсутній | |||||||||||||
| B2D10065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 62W Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 85A Max. forward voltage: 1.7V Leakage current: 20µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D10065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 183 шт: термін постачання 7-14 дні (днів) |
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| B2D10065KF1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube | на замовлення 183 шт: термін постачання 21-30 дні (днів) |
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| B2D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 47W; TO220ISO; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 47W Semiconductor structure: single diode Case: TO220ISO Kind of package: tube Max. forward impulse current: 85A Max. forward voltage: 1.7V Leakage current: 10µA | на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| B2D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 47W; TO220ISO; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 47W Semiconductor structure: single diode Case: TO220ISO Kind of package: tube Max. forward impulse current: 85A Max. forward voltage: 1.7V Leakage current: 10µA кількість в упаковці: 1 шт | на замовлення 67 шт: термін постачання 7-14 дні (днів) |
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| B2D10065Q | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 54W Semiconductor structure: single diode Case: DFN8x8 Kind of package: reel; tape Max. forward impulse current: 70A Max. forward voltage: 1.67V Leakage current: 20µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D10065Q | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DFN8x8; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 54W Semiconductor structure: single diode Case: DFN8x8 Kind of package: reel; tape Max. forward impulse current: 70A Max. forward voltage: 1.67V Leakage current: 20µA | товар відсутній | |||||||||||||
| B2D10120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252-2 Mounting: SMD Case: TO252-2 Kind of package: reel; tape Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D10120E1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252-2 Mounting: SMD Case: TO252-2 Kind of package: reel; tape Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC | товар відсутній | |||||||||||||
| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 62W; TO247-2; tube Mounting: THT Max. forward impulse current: 90A Leakage current: 30µA Case: TO247-2 Kind of package: tube Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 2V Power dissipation: 62W Technology: SiC | на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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| B2D10120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 62W; TO247-2; tube Mounting: THT Max. forward impulse current: 90A Leakage current: 30µA Case: TO247-2 Kind of package: tube Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 2V Power dissipation: 62W Technology: SiC кількість в упаковці: 1 шт | на замовлення 37 шт: термін постачання 7-14 дні (днів) |
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| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; 64W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Power dissipation: 64W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 55A Max. forward voltage: 1.8V Leakage current: 20µA кількість в упаковці: 1 шт | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| B2D10120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; 64W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Power dissipation: 64W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 55A Max. forward voltage: 1.8V Leakage current: 20µA | на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| B2D10120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 80W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 80W | на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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| B2D10120K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 80W; TO220-2; tube Mounting: THT Case: TO220-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 90A Leakage current: 30µA Power dissipation: 80W кількість в упаковці: 1 шт | на замовлення 19 шт: термін постачання 7-14 дні (днів) |
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| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Mounting: THT Case: TO247-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode кількість в упаковці: 1 шт | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| B2D15120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Mounting: THT Case: TO247-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode | на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Mounting: THT Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A кількість в упаковці: 1 шт | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| B2D16065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Mounting: THT Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A | на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| B2D16120HC1 | BASiC SEMICONDUCTOR | B2D16120HC1 THT Schottky diodes | на замовлення 25 шт: термін постачання 7-14 дні (днів) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape | на замовлення 597 шт: термін постачання 21-30 дні (днів) |
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| B2D20065F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 20A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape кількість в упаковці: 1 шт | на замовлення 597 шт: термін постачання 7-14 дні (днів) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 130W; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Power dissipation: 130W Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 146A Max. forward voltage: 1.7V Leakage current: 15µA | на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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| B2D20065H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 130W; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Power dissipation: 130W Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 146A Max. forward voltage: 1.7V Leakage current: 15µA кількість в упаковці: 1 шт | на замовлення 31 шт: термін постачання 7-14 дні (днів) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 74W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 70A Max. forward voltage: 1.75V Leakage current: 30µA | на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| B2D20065HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 74W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 70A Max. forward voltage: 1.75V Leakage current: 30µA кількість в упаковці: 1 шт | на замовлення 40 шт: термін постачання 7-14 дні (днів) |
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| B2D20065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube | на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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| B2D20065K1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 35 шт: термін постачання 7-14 дні (днів) |
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| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 33W; TO3PF; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Semiconductor structure: common cathode; double Case: TO3PF Kind of package: tube Max. forward impulse current: 70A Max. forward voltage: 1.62V Leakage current: 20µA | на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| B2D20065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 33W; TO3PF; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Semiconductor structure: common cathode; double Case: TO3PF Kind of package: tube Max. forward impulse current: 70A Max. forward voltage: 1.62V Leakage current: 20µA кількість в упаковці: 1 шт | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263-2; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 122W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 1.8V Leakage current: 33µA | товар відсутній | |||||||||||||
| B2D20120F1 | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263-2; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 122W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 1.8V Leakage current: 33µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 159W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 159W Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 190A Max. forward voltage: 1.78V Leakage current: 40µA | на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| B2D20120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 159W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 159W Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 190A Max. forward voltage: 1.78V Leakage current: 40µA кількість в упаковці: 1 шт | на замовлення 44 шт: термін постачання 7-14 дні (днів) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 20A Power dissipation: 60W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 90A Max. forward voltage: 2V Leakage current: 40µA | на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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| B2D20120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 60W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 20A Power dissipation: 60W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 90A Max. forward voltage: 2V Leakage current: 40µA кількість в упаковці: 1 шт | на замовлення 24 шт: термін постачання 7-14 дні (днів) |
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| B2D30065H1 | BASiC SEMICONDUCTOR | B2D30065H1 THT Schottky diodes | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| B2D30065HC1 | BASiC SEMICONDUCTOR | B2D30065HC1 THT Schottky diodes | на замовлення 14 шт: термін постачання 7-14 дні (днів) |
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| B2D30120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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| B2D30120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| B2D30120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 95W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 30A Power dissipation: 95W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 1.75V Leakage current: 40µA | на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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| B2D30120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 95W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 30A Power dissipation: 95W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 1.75V Leakage current: 40µA кількість в упаковці: 1 шт | на замовлення 46 шт: термін постачання 7-14 дні (днів) |
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| B2D40065H1 | BASiC SEMICONDUCTOR | B2D40065H1 THT Schottky diodes | на замовлення 31 шт: термін постачання 7-14 дні (днів) |
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| B2D40065HC1 | BASiC SEMICONDUCTOR | B2D40065HC1 THT Schottky diodes | на замовлення 64 шт: термін постачання 7-14 дні (днів) |
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| B2D40120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube | на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| B2D40120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 40 шт: термін постачання 7-14 дні (днів) |
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| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Power dissipation: 112W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 1.92V Leakage current: 30µA кількість в упаковці: 1 шт | на замовлення 77 шт: термін постачання 7-14 дні (днів) |
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| B2D40120HC1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Power dissipation: 112W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 180A Max. forward voltage: 1.92V Leakage current: 30µA | на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2 Type of diode: Schottky rectifying Case: TO247-2 Mounting: THT Max. forward voltage: 2.1V Power dissipation: 361W Technology: SiC Max. off-state voltage: 1.2kV Load current: 60A Kind of package: tube Semiconductor structure: single diode Leakage current: 70µA Max. forward impulse current: 340A | на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| B2D60120H1 | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2 Type of diode: Schottky rectifying Case: TO247-2 Mounting: THT Max. forward voltage: 2.1V Power dissipation: 361W Technology: SiC Max. off-state voltage: 1.2kV Load current: 60A Kind of package: tube Semiconductor structure: single diode Leakage current: 70µA Max. forward impulse current: 340A кількість в упаковці: 1 шт | на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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