Продукція > IGZ
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IGZ100N65H5 | Infineon Technologies | Description: IGZ100N65 - DISCRETE IGBT WITHOU | товар відсутній | |||||||||||||||
IGZ100N65H5 | Infineon technologies | на замовлення 32 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
IGZ100N65H5XKSA1 | Infineon Technologies | Description: IGBT TRENCH 650V 161A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 30ns/421ns Switching Energy: 850µJ (on), 770µJ (off) Test Condition: 400V, 50A, 8Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 161 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 536 W | товар відсутній | |||||||||||||||
IGZ100N65H5XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Manufacturer series: H5 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 101A Pulsed collector current: 400A Turn-on time: 40ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 268W Kind of package: tube Gate charge: 0.21µC Technology: TRENCHSTOP™ 5 Mounting: THT Case: TO247-4 кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IGZ100N65H5XKSA1 | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IGZ100N65H5XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Manufacturer series: H5 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 101A Pulsed collector current: 400A Turn-on time: 40ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 268W Kind of package: tube Gate charge: 0.21µC Technology: TRENCHSTOP™ 5 Mounting: THT Case: TO247-4 | товар відсутній | |||||||||||||||
IGZ100N65H5XKSA1 | Infineon Technologies | Description: IGBT TRENCH 650V 161A TO247-4 Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 30ns/421ns Switching Energy: 850µJ (on), 770µJ (off) Test Condition: 400V, 50A, 8Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 161 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 536 W | на замовлення 1718 шт: термін постачання 21-31 дні (днів) |
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IGZ100N65H5XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
IGZ50N65H5XKSA1 | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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IGZ50N65H5XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns | товар відсутній | |||||||||||||||
IGZ50N65H5XKSA1 | Infineon Technologies | Description: IGBT TRENCH 650V 85A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/250ns Switching Energy: 410µJ (on), 190µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W | товар відсутній | |||||||||||||||
IGZ50N65H5XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
IGZ50N65H5XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 109nC Kind of package: tube Manufacturer series: H5 Turn-on time: 27ns Turn-off time: 271ns кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
IGZ75N65H5 | Infineon technologies | на замовлення 5 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
IGZ75N65H5 | Infineon Technologies | Infineon INDUSTRY 14 | товар відсутній | |||||||||||||||
IGZ75N65H5XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 650V 119A 395000mW 4-Pin(4+Tab) TO-247 Tube | товар відсутній | |||||||||||||||
IGZ75N65H5XKSA1 | Infineon Technologies | IGBT Transistors IGBT PRODUCTS | на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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IGZ75N65H5XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 197W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 166nC Kind of package: tube Turn-on time: 37ns Turn-off time: 415ns | товар відсутній | |||||||||||||||
IGZ75N65H5XKSA1 | Infineon Technologies | Description: IGBT TRENCH 650V 119A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 26ns/347ns Switching Energy: 680µJ (on), 430µJ (off) Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 119 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W | на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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IGZ75N65H5XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 197W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 166nC Kind of package: tube Turn-on time: 37ns Turn-off time: 415ns кількість в упаковці: 1 шт | товар відсутній |