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MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD100N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD100N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD100P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V

товар відсутній

PJD100P03_L2_00001

MOSFET 30V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD100P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V

товар відсутній

PJD10N10-L2-00001

MOSFET

товар відсутній

PJD10N10_L2_00001

Description: 100V N-CHANNEL MOSFET

товар відсутній

PJD10N10_L2_00001

MOSFET 100V N-Channel MOSFET

товар відсутній

PJD10N10_L2_00001

Description: 100V N-CHANNEL MOSFET

товар відсутній

PJD10P10A-L2-00001

MOSFET

товар відсутній

PJD10P10A_L2_00001

Description: 100V P-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V

товар відсутній

PJD10P10A_L2_00001

MOSFET 100V P-Channel MOSFET

товар відсутній

PJD11N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101

на замовлення 2995 шт:

термін постачання 21-31 дні (днів)

9+	34.66 грн
10+	28.65 грн
100+	19.9 грн
500+	14.58 грн
1000+	11.85 грн

Мінімальне замовлення: 9

PJD11N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 2980 шт:

термін постачання 21-30 дні (днів)

9+	37.7 грн
10+	31.94 грн
100+	20.76 грн
500+	16.36 грн
1000+	12.95 грн
3000+	11.02 грн
9000+	9.95 грн

Мінімальне замовлення: 9

PJD11N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101

товар відсутній

PJD11N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD11N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD12P06-AU_L2_000A1

MOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASD9/PJx12P06-ASE9/TO252-AS02

товар відсутній

PJD12P06-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD12P06-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD12P06_L2_00001

MOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASC8/PJx12P06-ASE9/TO252-AS02

товар відсутній

PJD13N10A-L2-00001

MOSFET TO-252AA/MOS/TO/NFET-100SMN

товар відсутній

PJD13N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	11.36 грн

Мінімальне замовлення: 3000

PJD13N10A_L2_00001

MOSFET 100V N-Channel MOSFET

товар відсутній

PJD13N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V

на замовлення 4928 шт:

термін постачання 21-31 дні (днів)

9+	33.22 грн
11+	27.75 грн
100+	19.29 грн
500+	14.13 грн
1000+	11.49 грн

Мінімальне замовлення: 9

PJD14P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

на замовлення 2980 шт:

термін постачання 21-31 дні (днів)

7+	43.33 грн
10+	36.51 грн
100+	28 грн
500+	20.77 грн
1000+	16.62 грн

Мінімальне замовлення: 7

PJD14P06A-AU_L2_000A1

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 2950 шт:

термін постачання 21-30 дні (днів)

7+	46.89 грн
10+	40.38 грн
100+	26.97 грн
500+	21.36 грн
1000+	17.76 грн
3000+	15.02 грн
9000+	13.82 грн

Мінімальне замовлення: 7

PJD14P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

товар відсутній

PJD14P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD14P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

на замовлення 2987 шт:

термін постачання 21-31 дні (днів)

7+	42.61 грн
10+	35.19 грн
100+	26.23 грн
500+	19.34 грн
1000+	14.95 грн

Мінімальне замовлення: 7

PJD14P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V

товар відсутній

PJD15P06A-AU_L2_000A1

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced

товар відсутній

PJD15P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 30526 шт:

термін постачання 21-31 дні (днів)

8+	41.16 грн
10+	34.22 грн
100+	23.69 грн
500+	18.57 грн
1000+	15.81 грн

Мінімальне замовлення: 8

PJD15P06A-AU_L2_000A1

товар відсутній

PJD15P06A-AU_L2_000A1

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 1793 шт:

термін постачання 21-30 дні (днів)

7+	45.41 грн
10+	39.54 грн
100+	26.37 грн
500+	20.83 грн
1000+	17.29 грн
3000+	14.69 грн
9000+	13.49 грн

Мінімальне замовлення: 7

PJD15P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 30000 шт:

термін постачання 21-31 дні (днів)

3000+	15.58 грн
6000+	14.21 грн
9000+	13.16 грн
30000+	12.23 грн

Мінімальне замовлення: 3000

PJD15P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	46.89 грн
10+	39.39 грн
100+	25.64 грн
500+	20.16 грн
1000+	16.02 грн
3000+	13.55 грн
6000+	13.22 грн

Мінімальне замовлення: 7

PJD15P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 28927 шт:

термін постачання 21-31 дні (днів)

8+	40.44 грн
10+	33.31 грн
100+	23.14 грн
500+	16.95 грн
1000+	13.78 грн

Мінімальне замовлення: 8

PJD15P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V

на замовлення 27000 шт:

термін постачання 21-31 дні (днів)

3000+	13.63 грн
6000+	12.46 грн
9000+	11.57 грн

Мінімальне замовлення: 3000

PJD16N06A-AU-L2

MOSFET

товар відсутній

PJD16N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101

товар відсутній

PJD16N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD16N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101

товар відсутній

PJD16N06A-L2-00001

MOSFET

товар відсутній

PJD16N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V

товар відсутній

PJD16N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD16N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V

товар відсутній

PJD16N08A-L2-00001

MOSFET

товар відсутній

PJD16P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

на замовлення 5999 шт:

термін постачання 21-31 дні (днів)

6+	48.39 грн
10+	40.68 грн
100+	31.19 грн
500+	23.14 грн
1000+	18.51 грн

Мінімальне замовлення: 6

PJD16P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	18.56 грн

Мінімальне замовлення: 3000

PJD16P06A-L2-00001

MOSFET

товар відсутній

PJD16P06A_L2_00001

PJD16P06A-L2 SMD P channel transistors

товар відсутній

PJD16P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

товар відсутній

PJD16P06A_L2_00001

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 19601 шт:

термін постачання 21-30 дні (днів)

8+	42.76 грн
10+	36.85 грн
100+	21.83 грн
500+	18.23 грн
1000+	16.02 грн
3000+	13.55 грн
6000+	13.02 грн

Мінімальне замовлення: 8

PJD16P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V

товар відсутній

PJD18N20-L2-00001

MOSFET TO-252AA/MOS/TO/NFET-200SMN

товар відсутній

PJD18N20_L2_00001

Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V

на замовлення 11695 шт:

термін постачання 21-31 дні (днів)

5+	61.39 грн
10+	51.25 грн
100+	35.46 грн
500+	27.81 грн
1000+	23.67 грн

Мінімальне замовлення: 5

PJD18N20_L2_00001

MOSFET 200V N-Channel Enhancement Mode MOSFET

на замовлення 10816 шт:

термін постачання 21-30 дні (днів)

5+	66.67 грн
10+	57.81 грн
100+	34.32 грн
500+	28.71 грн
1000+	25.1 грн
3000+	21.3 грн
6000+	20.5 грн

Мінімальне замовлення: 5

PJD18N20_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 24nC
кількість в упаковці: 1 шт

товар відсутній

PJD18N20_L2_00001

товар відсутній

PJD18N20_L2_00001

Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V

на замовлення 9000 шт:

термін постачання 21-31 дні (днів)

3000+	23.32 грн
6000+	21.28 грн
9000+	19.7 грн

Мінімальне замовлення: 3000

PJD1NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD1NA60B_L2_00001

MOSFET PJ/D1NA60B/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN//PJ/TO252-ASA2/PJx1NA60B-AS29/TO252-AS02

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

PJD1NA60_L2_00001

ESD Suppressors / TVS Diodes TVS ESD SOD-123S 60V 96.8V

товар відсутній

PJD25N03-L2-00001

MOSFET TO-252AA/MOS/TO/NFET-30SMN

товар відсутній

PJD25N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	9.3 грн

Мінімальне замовлення: 3000

PJD25N03_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

на замовлення 3000 шт:

термін постачання 7-14 дні (днів)

5+	64.89 грн
10+	28.08 грн
25+	16.52 грн
75+	12.85 грн
207+	12.1 грн
6000+	11.77 грн

Мінімальне замовлення: 5

PJD25N03_L2_00001

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	54.07 грн
16+	22.53 грн
26+	13.77 грн
75+	10.71 грн
207+	10.08 грн

Мінімальне замовлення: 7

PJD25N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

на замовлення 2036 шт:

термін постачання 21-30 дні (днів)

11+	30.45 грн
13+	25.34 грн
100+	16.42 грн
500+	12.88 грн
1000+	10.28 грн
3000+	8.68 грн
9000+	7.88 грн

Мінімальне замовлення: 11

PJD25N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V

на замовлення 6487 шт:

термін постачання 21-31 дні (днів)

11+	27.44 грн
13+	22.74 грн
100+	15.79 грн
500+	11.56 грн
1000+	9.4 грн

Мінімальне замовлення: 11

PJD25N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25N04-L2-00001

MOSFET

товар відсутній

PJD25N04V-AU_L2_002A1

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced

товар відсутній

PJD25N04V-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	107.49 грн
10+	87.52 грн
100+	61.09 грн
250+	56.35 грн
500+	51.14 грн
1000+	43.86 грн
3000+	41.66 грн

Мінімальне замовлення: 3

PJD25N04V-AU_L2_002A1

товар відсутній

PJD25N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V

товар відсутній

PJD25N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD25N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V

товар відсутній

PJD25N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101

на замовлення 587 шт:

термін постачання 21-31 дні (днів)

6+	52 грн
10+	43.53 грн
100+	30.15 грн
500+	23.64 грн

Мінімальне замовлення: 6

PJD25N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD25N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD25N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V

на замовлення 1209 шт:

термін постачання 21-31 дні (днів)

8+	38.28 грн
10+	31.43 грн
100+	21.85 грн
500+	16.01 грн
1000+	13.01 грн

Мінімальне замовлення: 8

PJD25N06A_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

на замовлення 2905 шт:

термін постачання 7-14 дні (днів)

5+	62.01 грн
9+	29.46 грн
25+	17.27 грн
69+	14.1 грн
188+	13.35 грн
3000+	12.85 грн
6000+	12.77 грн

Мінімальне замовлення: 5

PJD25N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 68692 шт:

термін постачання 21-30 дні (днів)

8+	41.28 грн
10+	34.55 грн
100+	22.5 грн
500+	17.62 грн
1000+	14.09 грн
3000+	11.02 грн
9000+	10.82 грн

Мінімальне замовлення: 8

PJD25N06A_L2_00001

на замовлення 2905 шт:

термін постачання 21-30 дні (днів)

8+	51.68 грн
15+	23.64 грн
25+	14.4 грн
69+	11.75 грн
188+	11.13 грн

Мінімальне замовлення: 8

PJD25N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V

товар відсутній

PJD25N10A_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V

товар відсутній

PJD25N10A_L2_00001

MOSFET 100V N-Channel Enhancement Mode MOSFET

на замовлення 1750 шт:

термін постачання 21-30 дні (днів)

6+	53.59 грн
10+	46.68 грн
100+	27.71 грн
500+	23.17 грн
1000+	20.23 грн
3000+	17.16 грн
6000+	16.49 грн

Мінімальне замовлення: 6

PJD25N10A_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3601 pF @ 15 V

на замовлення 2803 шт:

термін постачання 21-31 дні (днів)

6+	49.11 грн
10+	41.38 грн
100+	28.63 грн
500+	22.45 грн
1000+	19.11 грн

Мінімальне замовлення: 6

PJD25P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD25P03_L2_00001

MOSFET 30V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD25P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD2NA1K_L2_00001

MOSFET PJ/D2NA1K/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-1000SMN//PJ/TO252-AS82/TO252-AS83/TO252-AS02

товар відсутній

PJD2NA1K_L2_00001

Description: 1000V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V

товар відсутній

PJD2NA60_L2_00001

MOSFET PJ/D2NA60/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN/NF600-QI29/PJ/TO252-AS26/TO252-AS27/TO252-AS02

товар відсутній

PJD2NA60_R2_00001

MOSFET PJ/D2NA60/TR/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN/NF600-QI29/PJ/TO252-AS26/TO252-AS27/TO252-AS02

товар відсутній

PJD2NA70_L2_00001

MOSFET PJ/D2NA70/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-700SMN/NF700-QI10/PJ/TO252-AS32/TO252-AS33/TO252-AS02

товар відсутній

PJD2NA90_L2_00001

MOSFET PJ/D2NA90/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-900SMN//PJ/TO252-AS55/TO252-AS56/TO252-AS02

товар відсутній

PJD30N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	41.37 грн

Мінімальне замовлення: 3000

PJD30N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	108.26 грн
10+	86.76 грн
100+	59.22 грн
500+	50.14 грн
1000+	40.86 грн
3000+	38.52 грн
6000+	36.65 грн

Мінімальне замовлення: 3

PJD30N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3+	100.38 грн
10+	78.79 грн
100+	61.29 грн
500+	48.75 грн
1000+	39.72 грн

Мінімальне замовлення: 3

PJD30N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V

товар відсутній

PJD30N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V

на замовлення 2976 шт:

термін постачання 21-31 дні (днів)

5+	68.61 грн
10+	53.9 грн
100+	41.92 грн
500+	33.35 грн
1000+	27.17 грн

Мінімальне замовлення: 5

PJD30N15_L2_00001

MOSFET 150V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD342

на замовлення 306 шт:

термін постачання 14-28 дні (днів)

PJD35N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

товар відсутній

PJD35N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD35N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

товар відсутній

PJD35N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 2976 шт:

термін постачання 21-30 дні (днів)

8+	44.16 грн
10+	37.24 грн
100+	24.23 грн
500+	19.03 грн
1000+	15.15 грн
3000+	12.82 грн
6000+	12.48 грн

Мінімальне замовлення: 8

PJD35N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

на замовлення 2730 шт:

термін постачання 21-31 дні (днів)

7+	45.5 грн
10+	37.48 грн
100+	27.97 грн
500+	20.62 грн
1000+	15.94 грн

Мінімальне замовлення: 7

PJD35N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V

товар відсутній

PJD35P03_L2_00001

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2901 шт:

термін постачання 21-30 дні (днів)

8+	43.23 грн
10+	36.31 грн
100+	23.57 грн
500+	18.56 грн
1000+	14.82 грн
3000+	12.48 грн
6000+	12.15 грн

Мінімальне замовлення: 8

PJD35P03_L2_00001

PJD35P03-L2 SMD P channel transistors

на замовлення 3000 шт:

термін постачання 7-14 дні (днів)

5+	64.89 грн
69+	14.1 грн
190+	13.35 грн

Мінімальне замовлення: 5

PJD3NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD3NA80_L2_00001

MOSFET 800V N-Channel MOSFET

товар відсутній

PJD40N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

на замовлення 2985 шт:

термін постачання 21-31 дні (днів)

6+	55.61 грн
10+	46.94 грн
100+	36 грн
500+	26.7 грн
1000+	21.36 грн

Мінімальне замовлення: 6

PJD40N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD40N04_L2_00001

LED Displays & Accessories 40MM LED AC ADAPTER DISPLAY LI

товар відсутній

PJD40N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

на замовлення 2950 шт:

термін постачання 21-31 дні (днів)

8+	40.44 грн
10+	33.24 грн
100+	24.85 грн
500+	18.32 грн
1000+	14.16 грн

Мінімальне замовлення: 8

PJD40N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M

товар відсутній

PJD40N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD40N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD40N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD40N06A-L2-00001

MOSFET

товар відсутній

PJD40N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD40N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V

товар відсутній

PJD40N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V

товар відсутній

PJD40N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE

товар відсутній

PJD40N15_L2_00001

Description: 150V N-CHANNEL ENHANCEMENT MODE

товар відсутній

PJD40N15_L2_00001

MOSFET 150V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD40P03E-AU_L2_006A1

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

товар відсутній

PJD40P03E-AU_L2_006A1

товар відсутній

PJD40P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2990 шт:

термін постачання 21-30 дні (днів)

4+	89.57 грн
10+	72.86 грн
100+	49.34 грн
500+	41.86 грн
1000+	34.12 грн
3000+	32.05 грн
6000+	30.58 грн

Мінімальне замовлення: 4

PJD45N03-L2-00001

MOSFET

товар відсутній

PJD45N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD45N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

товар відсутній

PJD45N06A-AU_L2_000A1

MOSFET 60V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD45N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

товар відсутній

PJD45N06A-AU_L2_000A1

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

товар відсутній

PJD45N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

на замовлення 1351 шт:

термін постачання 21-31 дні (днів)

6+	49.11 грн
10+	40.89 грн
100+	28.33 грн
500+	22.22 грн
1000+	18.91 грн

Мінімальне замовлення: 6

PJD45N06A_L2_00001

Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

товар відсутній

PJD45N06A_L2_00001

MOSFET 60V N-Channel Enhancement Mode MOSFET

на замовлення 14296 шт:

термін постачання 21-30 дні (днів)

6+	52.19 грн
10+	44.99 грн
100+	26.7 грн
500+	22.3 грн
1000+	19.49 грн
3000+	16.49 грн
6000+	15.96 грн

Мінімальне замовлення: 6

PJD45N06A_L2_00001

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 63W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

на замовлення 3000 шт:

термін постачання 7-14 дні (днів)

5+	65.34 грн
9+	29.38 грн
25+	25.45 грн
49+	19.69 грн
134+	18.61 грн
6000+	18.19 грн

Мінімальне замовлення: 5

PJD45N06A_L2_00001

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	54.45 грн
15+	23.58 грн
25+	21.21 грн
49+	16.41 грн
134+	15.51 грн

Мінімальне замовлення: 7

PJD45P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2998 шт:

термін постачання 21-30 дні (днів)

3+	139.42 грн
10+	114.4 грн
100+	79.45 грн
250+	73.44 грн
500+	66.43 грн
1000+	57.01 грн
3000+	54.21 грн

Мінімальне замовлення: 3

PJD45P03E-AU_L2_006A1

товар відсутній

PJD45P03E-AU_L2_006A1

товар відсутній

PJD45P04_L2_00001

PJD45P04-L2 SMD P channel transistors

товар відсутній

PJD45P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V

на замовлення 2689 шт:

термін постачання 21-31 дні (днів)

5+	60.66 грн
10+	51.11 грн
100+	39.19 грн
500+	29.07 грн
1000+	23.26 грн

Мінімальне замовлення: 5

PJD45P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V

товар відсутній

PJD45P04_L2_00001

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 2618 шт:

термін постачання 21-30 дні (днів)

6+	60.75 грн
10+	53.05 грн
100+	35.38 грн
500+	27.97 грн
1000+	23.3 грн
3000+	19.69 грн
9000+	18.16 грн

Мінімальне замовлення: 6

PJD4NA65H_L2_00001

MOSFET PJ/D4NA65H/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN//PJ/TO252-AS53/TO252-AS54/TO252-AS02

товар відсутній

PJD4NA70_L2_00001

MOSFET PJ/D4NA70/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-700SMN//PJ/TO252-AS34/TO252-AS35/TO252-AS02

товар відсутній

PJD4NA90_L2_00001

Description: 900V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V

товар відсутній

PJD4NA90_L2_00001

MOSFET 900V N-Channel MOSFET

товар відсутній

PJD4NA90_L2_00001

Description: 900V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V

товар відсутній

PJD50N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 64.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

товар відсутній

PJD50N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 2978 шт:

термін постачання 21-30 дні (днів)

5+	66.67 грн
10+	57.66 грн
100+	34.18 грн
500+	28.64 грн
1000+	25.04 грн
3000+	21.23 грн
6000+	20.43 грн

Мінімальне замовлення: 5

PJD50N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 64.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

на замовлення 2653 шт:

термін постачання 21-31 дні (днів)

5+	61.39 грн
10+	51.11 грн
100+	35.38 грн
500+	27.74 грн
1000+	23.61 грн

Мінімальне замовлення: 5

PJD50N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	49.27 грн

Мінімальне замовлення: 3000

PJD50N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3+	109.05 грн
10+	87.42 грн
100+	69.56 грн
500+	55.24 грн
1000+	46.87 грн

Мінімальне замовлення: 3

PJD50N04V-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	118.39 грн
10+	96.74 грн
100+	66.76 грн
250+	61.49 грн
500+	56.35 грн
1000+	48.27 грн
3000+	45.8 грн

Мінімальне замовлення: 3

PJD50N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

на замовлення 1950 шт:

термін постачання 21-31 дні (днів)

7+	43.33 грн
10+	35.81 грн
100+	24.89 грн
500+	18.24 грн
1000+	14.82 грн

Мінімальне замовлення: 7

PJD50N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

товар відсутній

PJD50N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD50N10AL-AU_L2_000A1

MOSFET 100V N-Channel Enhancement Mode MOSFET

на замовлення 2723 шт:

термін постачання 21-30 дні (днів)

5+	70.26 грн
10+	56.66 грн
100+	38.39 грн
500+	32.51 грн
1000+	27.77 грн
3000+	23.5 грн

Мінімальне замовлення: 5

PJD50N10AL-AU_L2_000A1

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Qualification: AEC-Q101

на замовлення 1297 шт:

термін постачання 21-31 дні (днів)

5+	65.72 грн
10+	51.67 грн
100+	40.22 грн
500+	31.99 грн
1000+	26.06 грн

Мінімальне замовлення: 5

PJD50N10AL-AU_L2_000A1

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V
Qualification: AEC-Q101

товар відсутній

PJD50N10AL_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V

на замовлення 2946 шт:

термін постачання 21-31 дні (днів)

5+	61.39 грн
10+	51.18 грн
100+	35.42 грн
500+	27.78 грн
1000+	23.64 грн

Мінімальне замовлення: 5

PJD50N10AL_L2_00001

MOSFET 100V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD50N10AL_L2_00001

Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 30 V

товар відсутній

PJD50P04-AU_L2_000A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD50P04-AU_L2_000A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

на замовлення 2750 шт:

термін постачання 21-31 дні (днів)

4+	72.94 грн
10+	57.44 грн
100+	44.7 грн
500+	35.55 грн
1000+	28.96 грн

Мінімальне замовлення: 4

PJD50P04-AU_L2_000A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

товар відсутній

PJD50P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

товар відсутній

PJD50P04_L2_00001

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V

на замовлення 5861 шт:

термін постачання 21-31 дні (днів)

6+	55.61 грн
10+	46.59 грн
100+	32.24 грн
500+	25.28 грн
1000+	21.51 грн

Мінімальне замовлення: 6

PJD50P04_L2_00001

MOSFET 40V P-Channel Enhancement Mode MOSFET

товар відсутній

PJD55N03-L2-00001

MOSFET

товар відсутній

PJD55N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD55N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V

товар відсутній

PJD55N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V

товар відсутній

PJD55N04S-AU

Panjit N CHAN 40V TO-252AA-2

товар відсутній

PJD55N04S-AU_L2_002A1

товар відсутній

PJD55N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	107.49 грн
10+	87.52 грн
100+	61.09 грн
250+	56.35 грн
500+	51.14 грн
1000+	43.86 грн
3000+	41.66 грн

Мінімальне замовлення: 3

PJD55N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04S-AU_L2_002A1

товар відсутній

PJD55N04V-AU_L2_002A1

товар відсутній

PJD55N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04V-AU_L2_002A1

товар відсутній

PJD55N04V-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD55N04V-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD55P03E-AU_L2_006A1

товар відсутній

PJD55P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	144.87 грн
10+	119 грн
100+	82.12 грн
250+	75.44 грн
500+	68.76 грн
1000+	59.22 грн
3000+	56.28 грн

Мінімальне замовлення: 3

PJD55P03E-AU_L2_006A1

товар відсутній

PJD5NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD5NA50_L2_00001

Description: 500V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V

товар відсутній

PJD5NA50_L2_00001

Description: 500V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V

товар відсутній

PJD5NA80_L2_00001

Description: 800V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

товар відсутній

PJD5NA80_L2_00001

MOSFET 800V N-Channel MOSFET

товар відсутній

PJD5NA80_L2_00001

Description: 800V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V

товар відсутній

PJD60N04-AU-L2-000A1

MOSFET

товар відсутній

PJD60N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD60N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD60N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD60N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

2+	166.68 грн
10+	136.66 грн
100+	94.13 грн
250+	86.79 грн
500+	78.78 грн
1000+	67.43 грн
3000+	64.56 грн

Мінімальне замовлення: 2

PJD60N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V

товар відсутній

PJD60N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V

товар відсутній

PJD60N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD60N06-L2-00001

MOSFET

товар відсутній

PJD60N06A-L2-00001

MOSFET

товар відсутній

PJD60N08-L2-00001

MOSFET

товар відсутній

PJD60P04E-AU_L2_006A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V

товар відсутній

PJD60P04E-AU_L2_006A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	105.93 грн
10+	85.99 грн
100+	58.22 грн
500+	49.34 грн
1000+	40.19 грн
3000+	37.85 грн
6000+	35.98 грн

Мінімальне замовлення: 3

PJD60P04E-AU_L2_006A1

товар відсутній

PJD60P04E-AU_L2_006A1

Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V

товар відсутній

PJD60P04E-AU_L2_006A1

товар відсутній

PJD60R390E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R390E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R390E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD60R540E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD60R620E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R620E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD60R620E_L2_00001

Description: 600V N-CHANNEL SUPER JUNCTION MO

товар відсутній

PJD60R980E_L2_00001

MOSFET 600V N-Channel Super Junction MOSFET

товар відсутній

PJD6NA40_L2_00001

MOSFET 400V N-Channel MOSFET

товар відсутній

PJD6NA40_R2_00001

MOSFET 400V N-Channel MOSFET

товар відсутній

PJD70N06-L2-00001

MOSFET

товар відсутній

PJD70N10-L2-00001

MOSFET

товар відсутній

PJD70P03E-AU_L2_006A1

товар відсутній

PJD70P03E-AU_L2_006A1

товар відсутній

PJD70P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 2875 шт:

термін постачання 21-30 дні (днів)

4+	100.48 грн
10+	81.38 грн
100+	55.28 грн
500+	46.8 грн
1000+	38.19 грн
3000+	35.92 грн
6000+	34.18 грн

Мінімальне замовлення: 4

PJD70P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V

товар відсутній

PJD70P03_L2_00001

Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V

на замовлення 766 шт:

термін постачання 21-31 дні (днів)

7+	44.78 грн
10+	37.48 грн
100+	25.93 грн
500+	20.34 грн

Мінімальне замовлення: 7

PJD75P04E-AU_L2_006A1

товар відсутній

PJD75P04E-AU_L2_006A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	135.53 грн
10+	110.56 грн
100+	76.78 грн
250+	70.77 грн
500+	63.96 грн
1000+	55.28 грн
3000+	52.54 грн

Мінімальне замовлення: 3

PJD75P04E-AU_L2_006A1

товар відсутній

PJD7NA65_L2_00001

MOSFET PJ/D7NA65/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN/NF650-QI13/PJ/TO252-AS06/TO252-AS07/TO252-AS02

товар відсутній

PJD7NA65_R2_00001

MOSFET PJ/D7NA65/TR/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN/NF650-QI13/PJ/TO252-AS06/TO252-AS07/TO252-AS02

товар відсутній

PJD80N03-L2-00001

MOSFET

товар відсутній

PJD80N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V

товар відсутній

PJD80N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V

товар відсутній

PJD80N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04-AU-L2-000A1

MOSFET TO-252AA/MOS/TO/NFET-40SMN

товар відсутній

PJD80N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

на замовлення 5990 шт:

термін постачання 21-31 дні (днів)

4+	76.55 грн
10+	60.57 грн
100+	47.1 грн
500+	37.47 грн
1000+	30.52 грн

Мінімальне замовлення: 4

PJD80N04-AU_L2_000A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 79.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

на замовлення 3000 шт:

термін постачання 21-31 дні (днів)

3000+	31.79 грн

Мінімальне замовлення: 3000

PJD80N04-AU_L2_000A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04-L2-00001

MOSFET

товар відсутній

PJD80N04S-AU_L2_002A1

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD80N04S-AU_L2_002A1

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD80N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

на замовлення 1327 шт:

термін постачання 21-31 дні (днів)

7+	47.66 грн
10+	39.71 грн
100+	27.46 грн
500+	21.53 грн
1000+	18.33 грн

Мінімальне замовлення: 7

PJD80N04_L2_00001

MOSFET 40V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD80N04_L2_00001

Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V

товар відсутній

PJD80N06-L2-00001

MOSFET

товар відсутній

PJD85N03-AU-L2-000A1

MOSFET

товар відсутній

PJD85N03-AU_L2_000A1

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD85N03-AU_L2_000A1

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD85N03-AU_L2_000A1

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V
Qualification: AEC-Q101

товар відсутній

PJD85N03-L2-00001

MOSFET

товар відсутній

PJD85N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V

товар відсутній

PJD85N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD85N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V

товар відсутній

PJD882

на замовлення 1000 шт:

термін постачання 14-28 дні (днів)

PJD8NA50_L2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD8NA50_R2_00001

MOSFET 500V N-Channel MOSFET

товар відсутній

PJD8NA65A_L2_00001

MOSFET PJ/D8NA65A/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-650SMN//PJ/TO252-AS96/PJx8NA65A-AS20/TO252-AS02

товар відсутній

PJD90N03-L2-00001

MOSFET

товар відсутній

PJD90N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V

на замовлення 2983 шт:

термін постачання 21-31 дні (днів)

4+	78 грн
10+	61.27 грн
100+	47.67 грн
500+	37.92 грн
1000+	30.89 грн

Мінімальне замовлення: 4

PJD90N03_L2_00001

Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V

товар відсутній

PJD90N03_L2_00001

MOSFET 30V N-Channel Enhancement Mode MOSFET

товар відсутній

PJD90P03E-AU_L2_006A1

MOSFET 30V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

2+	193.16 грн
10+	159.69 грн
25+	131.52 грн
100+	112.16 грн
250+	106.15 грн
500+	100.14 грн
1000+	85.45 грн

Мінімальне замовлення: 2

PJD90P03E-AU_L2_006A1

товар відсутній

PJD90P03E-AU_L2_006A1

товар відсутній

PJD95P04E-AU_L2_006A1

MOSFET 40V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

3+	129.29 грн
10+	106.72 грн
100+	74.11 грн
250+	68.1 грн
500+	61.49 грн
1000+	55.68 грн
3000+	47.33 грн

Мінімальне замовлення: 3

PJD9N10A_L2_00001

MOSFET 100V N-Channel MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

9+	38.4 грн
10+	32.63 грн
100+	21.16 грн
500+	16.62 грн
1000+	13.29 грн
3000+	11.22 грн
9000+	10.21 грн

Мінімальне замовлення: 9

PJD9N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V

на замовлення 11566 шт:

термін постачання 21-31 дні (днів)

9+	35.39 грн
10+	29.28 грн
100+	20.33 грн
500+	14.9 грн
1000+	12.11 грн

Мінімальне замовлення: 9

PJD9N10A_L2_00001

Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 9A (Tc)
Rds On (Max) @ Id, Vgs: 152mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1021 pF @ 25 V

на замовлення 9000 шт:

термін постачання 21-31 дні (днів)

3000+	11.98 грн
6000+	10.95 грн
9000+	10.17 грн

Мінімальне замовлення: 3000

PJD9P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

на замовлення 2616 шт:

термін постачання 21-31 дні (днів)

8+	40.44 грн
10+	34.22 грн
100+	26.25 грн
500+	19.48 грн
1000+	15.58 грн

Мінімальне замовлення: 8

PJD9P06A-AU_L2_000A1

MOSFET 60V P-Channel Enhancement Mode MOSFET

на замовлення 3000 шт:

термін постачання 21-30 дні (днів)

7+	45.41 грн
10+	39.69 грн
100+	26.5 грн
500+	20.96 грн
1000+	16.76 грн
3000+	15.15 грн
6000+	14.62 грн

Мінімальне замовлення: 7

PJD9P06A-AU_L2_000A1

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

товар відсутній

PJD9P06A-L2-00001

MOSFET

товар відсутній

PJD9P06A_L2_00001

Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V

товар відсутній

PJD9P06A_L2_00001