Продукція > B1D
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| B1D03120E | BASiC SEMICONDUCTOR | B1D03120E SMD Schottky diodes | товар відсутній | |||||||||||||
| B1D04065KF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 13W; TO220FP-2; tube Mounting: THT Case: TO220FP-2 Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.7V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 10µA Power dissipation: 13W | на замовлення 2 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D05120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Power dissipation: 53W Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 60A Max. forward voltage: 1.78V Leakage current: 10µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B1D05120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Power dissipation: 53W Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 60A Max. forward voltage: 1.78V Leakage current: 10µA | товар відсутній | |||||||||||||
| B1D06065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape Mounting: SMD Case: TO263-2 Power dissipation: 38W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.73V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA | товар відсутній | |||||||||||||
| B1D06065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263-2; reel,tape Mounting: SMD Case: TO263-2 Power dissipation: 38W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.73V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B1D06065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 42W; TO220-2; tube Mounting: THT Case: TO220-2 Power dissipation: 42W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.73V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA | на замовлення 5 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D06065KF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 23W; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Power dissipation: 23W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 45A Max. forward voltage: 1.73V Leakage current: 20µA | товар відсутній | |||||||||||||
| B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube Mounting: THT Case: TO220ISO Power dissipation: 30W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.75V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA | на замовлення 38 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 30W; TO220ISO; tube Mounting: THT Case: TO220ISO Power dissipation: 30W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.75V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 20µA кількість в упаковці: 1 шт | на замовлення 38 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D08065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape Type of diode: Schottky rectifying Case: TO263-2 Mounting: SMD Kind of package: reel; tape Power dissipation: 48W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.75V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V | товар відсутній | |||||||||||||
| B1D08065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape Type of diode: Schottky rectifying Case: TO263-2 Mounting: SMD Kind of package: reel; tape Power dissipation: 48W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.75V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube Type of diode: Schottky rectifying Case: TO220-2 Mounting: THT Kind of package: tube Power dissipation: 56W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.75V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V | на замовлення 15 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 56W; TO220-2; tube Type of diode: Schottky rectifying Case: TO220-2 Mounting: THT Kind of package: tube Power dissipation: 56W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.75V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V кількість в упаковці: 1 шт | на замовлення 15 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D08065KF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 20W; TO220FP-2; tube Type of diode: Schottky rectifying Case: TO220FP-2 Mounting: THT Kind of package: tube Power dissipation: 20W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. off-state voltage: 650V Max. forward voltage: 1.69V Load current: 8A Semiconductor structure: single diode | на замовлення 3 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube Type of diode: Schottky rectifying Case: TO220ISO Mounting: THT Kind of package: tube Power dissipation: 32W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.73V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V кількість в упаковці: 1 шт | на замовлення 38 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 32W; TO220ISO; tube Type of diode: Schottky rectifying Case: TO220ISO Mounting: THT Kind of package: tube Power dissipation: 32W Max. forward impulse current: 64A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.73V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V | на замовлення 38 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D10065E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 50W Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA | товар відсутній | |||||||||||||
| B1D10065E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 50W Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B1D10065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 58W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA кількість в упаковці: 1 шт | товар відсутній | |||||||||||||
| B1D10065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Power dissipation: 58W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA | товар відсутній | |||||||||||||
| B1D10065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 68W; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 68W Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA | на замовлення 17 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D10065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 68W; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 68W Semiconductor structure: single diode Case: TO247-2 Kind of package: tube Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA кількість в упаковці: 1 шт | на замовлення 17 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 38W; TO220ISO; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 38W Semiconductor structure: single diode Case: TO220ISO Kind of package: tube Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA кількість в упаковці: 1 шт | на замовлення 48 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 38W; TO220ISO; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 38W Semiconductor structure: single diode Case: TO220ISO Kind of package: tube Max. forward impulse current: 75A Max. forward voltage: 1.75V Leakage current: 20µA | на замовлення 48 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D10120E | BASiC SEMICONDUCTOR | B1D10120E SMD Schottky diodes | товар відсутній | |||||||||||||
| B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 84W; TO220-2; tube Mounting: THT Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 112A Leakage current: 10µA Power dissipation: 84W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V | на замовлення 21 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 84W; TO220-2; tube Mounting: THT Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 112A Leakage current: 10µA Power dissipation: 84W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.75V кількість в упаковці: 1 шт | на замовлення 21 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube Mounting: THT Max. forward voltage: 1.75V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 73W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A | на замовлення 21 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 73W; TO247-3; tube Mounting: THT Max. forward voltage: 1.75V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 73W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Max. off-state voltage: 650V Max. load current: 16A кількість в упаковці: 1 шт | на замовлення 21 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D20065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry | на замовлення 29 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D20065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry кількість в упаковці: 1 шт | на замовлення 29 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D30065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Max. load current: 30A Power dissipation: 31W Semiconductor structure: common cathode; double Case: TO3PF Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.62V Leakage current: 30µA | на замовлення 24 шт: термін постачання 21-30 дні (днів) |
| ||||||||||||
| B1D30065TF | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 31W; TO3PF; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Max. load current: 30A Power dissipation: 31W Semiconductor structure: common cathode; double Case: TO3PF Kind of package: tube Max. forward impulse current: 110A Max. forward voltage: 1.62V Leakage current: 30µA кількість в упаковці: 1 шт | на замовлення 24 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1D40065H | BASiC SEMICONDUCTOR | B1D40065H THT Schottky diodes | на замовлення 19 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1DF | DC COMPONENTS | Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 35A; MBFL; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 35A Case: MBFL Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 5 шт | на замовлення 4025 шт: термін постачання 7-14 дні (днів) |
| ||||||||||||
| B1DF | DC COMPONENTS | Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 1A; Ifsm: 35A; MBFL; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1A Max. forward impulse current: 35A Case: MBFL Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated | на замовлення 4025 шт: термін постачання 21-30 дні (днів) |
|