IAUT300N08S5N011ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.53 грн |
| 10+ | 309.6 грн |
| 100+ | 250.49 грн |
| 500+ | 208.96 грн |
| 1000+ | 178.92 грн |
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Технічний опис IAUT300N08S5N011ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 410A (Tj), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 275µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V.
Інші пропозиції IAUT300N08S5N011ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IAUT300N08S5N011ATMA1 | Виробник : Infineon Technologies |
SP005427386 |
товар відсутній |
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| IAUT300N08S5N011ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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IAUT300N08S5N011ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V |
товар відсутній |
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| IAUT300N08S5N011ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
товар відсутній |
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| IAUT300N08S5N011ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |