NVMFS5C442NWFET1G onsemi
Виробник: onsemi
Description: T6-40V N 2.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: T6-40V N 2.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 63.84 грн |
| 3000+ | 58.4 грн |
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Технічний опис NVMFS5C442NWFET1G onsemi
Description: T6-40V N 2.3 MOHMS SL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.7W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.
Інші пропозиції NVMFS5C442NWFET1G за ціною від 67.99 грн до 134.37 грн
| Фото | Назва | Виробник | Інформація |
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NVMFS5C442NWFET1G | Виробник : onsemi |
Description: T6-40V N 2.3 MOHMS SL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| NVMFS5C442NWFET1G | Виробник : ON Semiconductor | T6-40V N 2.3 MOHMS SL |
товар відсутній |
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| NVMFS5C442NWFET1G | Виробник : onsemi |
 MOSFET T6-40V N 2.3 MOHMS SL |
товар відсутній |