PJT7812_R1_00001

PJT7812_R1_00001 Panjit International Inc.


PJT7812.pdf Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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Технічний опис PJT7812_R1_00001 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Not For New Designs.

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PJT7812_R1_00001 PJT7812_R1_00001 Виробник : Panjit International Inc. PJT7812.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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PJT7812_R1_00001 PJT7812_R1_00001 Виробник : Panjit PJT7812-1868976.pdf MOSFET 30V N-Channel Enhancement Mode MOSFETESD Protected
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