SKIIP 02NAC12T4V1 25232530 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 4A
Case: MiniSKiiP® 0
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 4A
Pulsed collector current: 12A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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Технічний опис SKIIP 02NAC12T4V1 25232530 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 4A, Case: MiniSKiiP® 0, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 4A, Pulsed collector current: 12A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 02NAC12T4V1 25232530
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SKIIP 02NAC12T4V1 25232530 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 4A Case: MiniSKiiP® 0 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 4A Pulsed collector current: 12A Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge |
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