SQM50034EL_GE3 Vishay / Siliconix
на замовлення 8786 шт:
термін постачання 301-310 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.89 грн |
| 10+ | 125.28 грн |
| 100+ | 86.35 грн |
| 500+ | 73.73 грн |
| 800+ | 59.85 грн |
| 2400+ | 58.79 грн |
| 5600+ | 56.93 грн |
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Технічний опис SQM50034EL_GE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQM50034EL_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SQM50034EL_GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) D2PAK |
товар відсутній |
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SQM50034EL_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 60V 100A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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SQM50034EL_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 60V 100A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |