STGB20M65DF2 STMicroelectronics
Виробник: STMicroelectronicsDescription: IGBT TRENCH FS 650V 40A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.68 грн |
| 10+ | 111.12 грн |
| 100+ | 88.43 грн |
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Технічний опис STGB20M65DF2 STMicroelectronics
Description: IGBT TRENCH FS 650V 40A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 166 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Supplier Device Package: D2PAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/108ns, Switching Energy: 140µJ (on), 560µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 63 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 166 W.
Інші пропозиції STGB20M65DF2 за ціною від 57.46 грн до 148.79 грн
| Фото | Назва | Виробник | Інформація |
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STGB20M65DF2 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss |
на замовлення 977 шт: термін постачання 21-30 дні (днів) |
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STGB20M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 40A 166000mW 3-Pin(2+Tab) D2PAK T/R |
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| STGB20M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 40A 166mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STGB20M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 40A 166W 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB20M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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STGB20M65DF2 | Виробник : STMicroelectronics |
Description: IGBT TRENCH FS 650V 40A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 166 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: D2PAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/108ns Switching Energy: 140µJ (on), 560µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 166 W |
товар відсутній |
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| STGB20M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 166W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |