WMO11N70SR WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Technology: WMOS™ SR
Case: TO252
Mounting: SMD
On-state resistance: 620mΩ
Kind of package: reel; tape
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 19A
Drain-source voltage: 700V
Drain current: 5.4A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Technology: WMOS™ SR
Case: TO252
Mounting: SMD
On-state resistance: 620mΩ
Kind of package: reel; tape
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 19A
Drain-source voltage: 700V
Drain current: 5.4A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис WMO11N70SR WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W, Technology: WMOS™ SR, Case: TO252, Mounting: SMD, On-state resistance: 620mΩ, Kind of package: reel; tape, Power dissipation: 63W, Polarisation: unipolar, Gate charge: 13.7nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 19A, Drain-source voltage: 700V, Drain current: 5.4A, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції WMO11N70SR
Фото | Назва | Виробник | Інформація |
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WMO11N70SR | Виробник : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W Technology: WMOS™ SR Case: TO252 Mounting: SMD On-state resistance: 620mΩ Kind of package: reel; tape Power dissipation: 63W Polarisation: unipolar Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 19A Drain-source voltage: 700V Drain current: 5.4A Type of transistor: N-MOSFET |
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